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N82S09AN Datasheet

ltem	Symbol	Test conditions	Min.	Typ.	Max.	Unit
Thermal Resistance	R thccri_a)	channel to air			62,5	0 c/w
Thermal Resistance	R thfchc1	channel to case			3,125	o c/w

N82S09AN Price

MHz MAG ANG 5 0.19 -61.9 10 0.10 -50.4 20 0.05 -29.9 50 0.12 5.3 100 0.04 15.1 150 0.06 17.1 200 0.11 19.0 250 0.08 15.2 300 0.08 -25.6 350 0.09 -62.1 400 0.06 11.4
N82S09AN on stock

Continuity of Specifications There is no change to this document as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal documentation improvements and are noted in the document revision summary, where supported. Future routine revisions will occur when appro- priate, and changes will be noted in a revision summary.

(VDD - 18 Vdc, VGG - 7.0 Vdc, f = 200 MHzl (Figure l) 3N201 tVnn = 18 Vdc.Vr = 6.0 Vdc, f = 45 MHz) (Figure 31 3N203

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