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N82S11F Datasheet

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N82S11F Price

Junction Temperature	Ti	40 t0 150	ac
Storage Temperature	Tstg	40 t0125	oC
Collector-Emitter Sustaining Voltage, VBE = -2V	VCEV(sus)	1200	Volts
Collector-Base Voltage	VCBO	1200	Vons
Emitter-Base Voltage	VEBO	7	Volts
Collector-Emitler Voltage	VCEV	1200	Volts
Continuous Collector Current	lc	400	Amperes
Diode Forward Current	IFM	400	Amperes
Continuous Base Current	B	20	Amperes
Diode Surge Current	IFSM	4000	Amperes
Power Dissipation	Pt	3120	Watts
Max. Mounting Torque M8 Terminal Screws (E, C)		95	in.-lb.
Max. Mounting Torque M4 Terminal Screws (B, Bx, E)		12	in.-lb.
Max. Mounting Torque M6 Mounting Screws		26	in.-lb.
Modular Weight (Typical)		870	Grams
V Isolation	VRMS	2500	Volts

N82S11F on stock

Characteristics			PT8000 SERIES
(T a = 250C unless noted}	Symbols	Conditions	Min Typ	Max	Units
Output Current	I	Ta = +500C, 400 LFM, pkg N Ta = +2 50C, naturaI convection	0.1 (1) - 0.1 (1) -	60 (2) 30 (2)	A

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

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