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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
NACE101M100V16X17TR13F	NIC		07+		36000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

NACE101M100V16X17TR13F Datasheet

- Support for IEEE 802.3x Full duplex flow control - Extremely flexible Rx packet filtration including: single address perfect filter with MSb masking, broadcast, 512 entry multicast/unicast hash table, deep packet pattern matching for up t0 4 unique patterns - Statistics gathered for support of RFC 1213 (MIB lI), RFC 1398 (Ether-Iike MIB), IEEE 802.3 LME, reducing CPU overhead for management - Internal 2 KB Transmit and 2 KB Receive data FIFOs
NACE101M100V16X17TR13F Price

The EN29F080 has a CMOS-compatible standby mode, which reduces the current to < 1pA (typical). It is placed in CMOS-compatible standby when the RESET# and CE pin is at Vcc + 0.5. The device also has a TTL-compatible standby mode, which reduces the maximum Vcc current to < 1mA. It is placed in TTL-compatible standby when the CE pin is at VIH. When in standby modes, the outputs are in a high-impedance state independent of theOE input.
NACE101M100V16X17TR13F on stock

ABSOLUTE MAXIMUM RATNNGS (TA = 250C UNLESS OTHERWISE NOTED}
Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		VDS	20		V
Gate-Source Voltage		VGS	6		V
	TA= 25C		515	485
Continuous Drain Current (Tj = 1500C)a	TA= 85C	ID	370	350	mA
Pulsed Drain Currentb		IDM	650
Continuous Source Current (diode conduction)		Is	450	380
	TA= 25C		280	250
Maximum Power Dissipationa	TA= 85C	PD	145	130	mW
Operating Junction and Storage Temperature Range		Tj, Tstg	-55t0 150		oc
Gate-Source ESD Rating (HBM, Method 3015)		ESD	2000		V

meet specified performance from -40rC t0 85rC but is not tested or OA sampled at these temperatures. The LT18061 is guaranteed to meet specified performance from -40rC t0 85rC. Note 6: Minimum supply voltage is guaranteed by power supply rejection ratio test.

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