NACE101M4V5X5.5TR13F Datasheet A +1.6V to +5.5V single-supply operating voltage range makes the MAX965 family of comparators ideal for 2-cell battery-powered applications. The MAX965/MAX967/ MAX968/MAX969 0ffer programmable hysteresis and an internal l.235V +1.5% reference. All devices are available in either space-saving 8-pin pMAX or 16-pin QSOP packages. NACE101M4V5X5.5TR13F Price| [CONTfiOLLE Ll TURNED, | | i A | | | | | | | | | | /Aj | | | | | | | | | 7 | | | | | | | | | < | | | | | | | | | | V | | | | | | | | | | 7 | | | | ] | | | | | | | | | | J | L | | | | | 7 | | | | | CON PGRI | | | | | | | | | URR~ T=1 l | | | | | | | | | | | NACE101M4V5X5.5TR13F on stock| | | iii -:; | | | I I tp =71Js_: | | | | | l | | | 10 | | | | | | )c | \. \, \\ \ \\ '. | | | l 100ps | | | | | | | | | | Ims | | | | | | | | | | | | | | | 7I | | pl- | | | 10 rr's ':OO ms | | | | u-r l l l l I | | | | | | I I llllll I I I II | | | | | | | | | | | | |
| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) DSS | Drain-source breakdown voltage | ID = ImA, VGs = OV | 500 | | | v | | V (BR) GSS | Gate-source breakdown voltage | IG = +100ccA, VDS = OV | ±30 | | | v | | IGSS | Gate-source leakage current | VGS = +25V, VDS = OV | | | ±10 | | | IDSS | Drain-source leakage current | VDS = 500V, VGS = OV | | | 1 | mA | | VGS (th) | Gate-source threshold voltage | ID = 1rTiA, VDS = 10V | 2 | 3 | 4 | v | | rDS (ON) | Drain-source on-state resistance | ID = 1A, VGS = 10V | | 3 4 | 4 4 | | | VDS (ON) | Drain-source on-state voltage | ID = 1A, VGS = 10V | | 3 4 | 4 4 | v | | yfs | Forward transfer admittance | ID = 1A, VDS = 10V | 1 0 | 1 5 | | S | | Ciss | Input capacitance | | | 300 | | pF | | Coss | Output capacitance | VDS = 25y VGS = Oy f= 1MHz | | 35 | | pF | | Crss | Reverse transfer capacitance | | 6 | | pF | | td (on) | Turn-on delay time | | | 13 | | ns | | tr | Rise time | VDD = 200V ID = 1A, VGS = 10V, RGEN = RGS = sol | | 10 | | ns | | td (off) | Turn-off delay time | | 30 | | ns | | tf | Fall time | | 30 | | ns | | VSD | Source-drain voltage | Is = 1A, VGS = OV | | 1 5 | 2 0 | v | | Rth (ch-c) | Thermal resistance | Channel to case | | | 2.08 | IC/W | | | | | | | | |