| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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NACE4R7M50V5X5.5TR13 Datasheet Collector-Emitter Bkdn Voltage at 10mA . . . Emitter-Collector Bkdn Voltage at 10mA . . . Collector Current Continuous at VGE = 5V, Tc '=' +25LC. . . . . . . . at VGE = 5V, Tc = +1000C. . . . . . . Gate-Emitter Voltage (Note~ Inductive Switching Current at L = 2.3mH! Tc -- +250C . . . . . . . . at L = 2.3mH, Tc = + 1750C . . . . . . . Collector to Emitter Avalanche Energy at L = 2.3mH, Tc = +250C Power Dissipation Total at Tc = +250C . . . . Power Dissipation Derating Tc > +250C. . . . Operating and Storage Junction Temperature Range . . . . . . . . . Maximum Lead Temperature for Soldering . ' ' ' ' ' ' ' ' Electrostatic Voltage at 100pF, isoo I ' ' ' ' ' NOTE: May be exceeded if IGEM iS limited t0 10mA. NACE4R7M50V5X5.5TR13 Price
NACE4R7M50V5X5.5TR13 on stock
The FDR is accessed with a special preamble in the slave byte (1011) and is located at address OFFh. It can only be modified by performing a byte write opera- tion directly to the address of the register and only one data byte is allowed for each register write operation. |
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