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NACE4R7M50V5X5.5TR13 Datasheet
Collector-Emitter Bkdn Voltage at 10mA . . . Emitter-Collector Bkdn Voltage at 10mA . . . Collector Current Continuous at VGE = 5V, Tc '=' +25LC. . . . . . . . at VGE = 5V, Tc = +1000C. . . . . . . Gate-Emitter Voltage (Note~ Inductive Switching Current at L = 2.3mH! Tc -- +250C . . . . . . . . at L = 2.3mH, Tc = + 1750C . . . . . . . Collector to Emitter Avalanche Energy at L = 2.3mH, Tc = +250C Power Dissipation Total at Tc = +250C . . . . Power Dissipation Derating Tc > +250C. . . . Operating and Storage Junction Temperature Range . . . . . . . . . Maximum Lead Temperature for Soldering . ' ' ' ' ' ' ' ' Electrostatic Voltage at 100pF, isoo I ' ' ' ' ' NOTE: May be exceeded if IGEM iS limited t0 10mA.
NACE4R7M50V5X5.5TR13 Price

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Core Diameter/Cladding Diameter Numerical Aperture
10/125 V m 0.11 50/125 ym 0.20 62.5/125 V m 0.275
0.45 A/W 0.45 A/W 0.45 A/W


NACE4R7M50V5X5.5TR13 on stock

All parameters apply across the speci- fied operating ranges unless otherwise noted. Vcc = +2.5) Commercia Industrial (l: / to +5.5V (C): Tamb = OIC to +70IC Tamb = -40IC to +85IC
Parameter Symbol Min Max Units Conditions
SCL and SDA pins: High levelinput voltage Low level input voltage Hysteresis of Schmitt trigger inputs Low level output voltage VIH VIL VHYS VOL 0.7 Vcc 0.05 Vcc 0.3 Vcc 0.40 V V V V (Note) IOL = 3.0 mA, Vcc = 4.5V IOL = 2.1 mA, Vcc = 2.5V
Input leakage current ILI -10 10 VIN = O.1V t0 5.5V, WP = Vss
Output leakage current ILO -10 10 cd\ VOUT = O.1V t0 5.5V
Pin capacitance (all inputs/outputs) CIN, COUT 10 pF Vcc = 5.OV (Note) Tamb = 25IC, f = 1 MHz
lcc Read 1 mA Vcc = 5.5V, SCL = 400 kHz
Operating current lcc Write 3 mA Vcc= 5.5V
Standby current lccs 50 ccA Vcc = 5.5V, SDA = SCL = Vcc AO, A1, A2 = Vss
Note: This parameter is periodically sampled and not 100% tested.


The FDR is accessed with a special preamble in the slave byte (1011) and is located at address OFFh. It can only be modified by performing a byte write opera- tion directly to the address of the register and only one data byte is allowed for each register write operation.