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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
NACEW101M6.3V6.3X5.5TR13F	NIC		07+		36000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

NACEW101M6.3V6.3X5.5TR13F Datasheet

The AAT3200 is available in a space-saving SOT23 package or a SOT-89 package for applications requiring increased power dissipation. The device is rated over a -400C to +850C temperature range. Since only a small, 1pF ceramic output capacitor is required, the AAT3200 is a truly cost-eective volt- age conversion solution.
NACEW101M6.3V6.3X5.5TR13F Price

Parameter	Symbol	Rating	Unit
Collector to base voltage	VCBO	-30	V
Collector to emitter voltage	VCEO	-20	V
Emitter to base voltage	VEBO	-7	V
Peak collector current	ICP	-5	A
Collector current	Ic	-3	A
Collector power dissipation *	Pc	1	W
Junction temperature	Ti	150	OC
Storage temperature	Tstg	-55 to +150	OC

NACEW101M6.3V6.3X5.5TR13F on stock

Note: ABSOLUTE MAXIMUM RATINGS are those conditions beyond which damage to the device may occur. Exposure to theseconditionsorbeyondthose indicated may adversely affect device reliability. Functional operation under absolute maxi- mum rating conditions is not implied.

Document Title
256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBATM SRAM
Revision Historv
Rev. History Issue Date	Remark
0.0 Initialissue April 7, 1999	Preliminary
0.1 Change fast access time from 7.5/8.0/8.5/9.0 ns t0 10/11/12 September15, 1999
Change set-up time from 2.0/2.2/2.5 ns t0 2.5 ns
Fix pin assignment error for pin 14 and pin 16

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