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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
NACEW221M6.3V6.3X6.3TR13F	NIC		07+		36000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

NACEW221M6.3V6.3X6.3TR13F Datasheet

PARAM ETER SYM BOL RATING UNIT

Collector to Base Voltage VCB0 9 V Collector to Emitter Voltage VCE0 6 V Emitter to Base Voltage VEB0 2 V Collector Current le 10 mA Total Power Dissipation PT 60 in l element mW 120 in 2 elementsNote Junction Temperature T, 150 'C Storage Temperature Tstg -65 to +150 0C

NACEW221M6.3V6.3X6.3TR13F Price

SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature pre- vents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure code that is used to bring up the system. Enabling the lock- down feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; any sector's usage as a write-protected region is optional to the user.
NACEW221M6.3V6.3X6.3TR13F on stock

M/A-COM's SW65-0440 is a GaAs MMIC absorptive SP4T switch with an integral silicon ASIC driver. This device is in a 24-lead plastic package. This switch offers excellent broadband performance and repeatability from DC t0 3 GHz, while maintaining low DC power dissipation. The SW65-0440 is ideally suited for wireless infrastructure applications.

I Features ~ High forward current transfer ratio hFE which has satisfactory linearity , Low collector-emitter saturation voltage VCE(sat) , N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

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