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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
NACT330M50V8X10.5TR13F	NIC		07+		20000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

NACT330M50V8X10.5TR13F Datasheet

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NACT330M50V8X10.5TR13F Price

Collector-emitter breakdown voltage /C = 1 mA, /B = 0	V(BR)CEO	1 2			V
Collector-emitter cutoff current VCE = 20 V, VBE = 0	/CES			1 00	UA
Collector-base cutoff current VCB = 10 V, /E = 0	/CBO			50	nA
Emitter-base cutoff current VEB = 1 V, /C = 0	/EBO			1	UA
DC current gain /C = 80 mA, VCE = 5 V	hFE	50	1 00	200

NACT330M50V8X10.5TR13F on stock

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The thermal coefficient is reduced t0 600 PPM/C, which is equivalent to a variation , over the OC-70C operating range, of +3% from the room-temperature delay settings and/or l.Ons. whichever is greater. The power supply coefficient is reduced, over the 4.75V-5.25V operating range, to +1% of the delay settings at the nominal 5.OVDC power supply and/or 2.Ons whichevar is greater. It is essential that the power supply pin be adequately bypassed and filtered. In addition, the power bus should be of as low an impedance construction as possible. Power planes are preferred.

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