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NACV4R7M400V10X10.8 Datasheet

Symbol Parameter Min Max Units Reference Test Method
NEND(3) ndurance 100,000 Cycles/Byte MIL-STD-883, Test Method 1033
TDR(3) Data Retention 1 00 Years MIL-STD-883, Test Method 1008
VZAp(3) ESD Susceptibility 2000 Volts MIL-STD-883, Test Method 3015
ILTH(3)(4) Latch-up 1 00 mA JEDEC Standard 17


NACV4R7M400V10X10.8 Price
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
NACV4R7M400V10X10.8 on stock

Parameter Symbol Conditions min typ max Unit
[Output on, VST = "L"]
Output voltage VOUT 3 2 3.3 3.4 V
VDROP1 0.4 0.6 V
Dropout voltage VDROP2 JO= 150 mA 0.2 0.3 V
Line regulation CVOLN 4 VVIN17 V 10 50 mV
Load regulation qVOLD 5 mA ' IOUT < 500 mA 24 80 mV
Peak output current IOP 600 900 mA
Output short-circuit current IOSc 100 300 mA
IQ1 IOUT=0 1.9 5 mA
Quiescent current IQ2 24 50 mA
Output noise voltage VNO 10 Hz < f < 100 kHz 30 UVrms
Temperature coefficient of output voltage CVOUT/OTj Tj = 25 t0 125 aC +0.4 mV/oC
Ripple rejection Rrej f= 120 Hz, 4.3 V : VIN < 17 V 70 dB
Output on control voltage VSTL O8 V
[Output off, VST = "H" ]
Low output voltage VO OFF VST= 5V 20 200 mV
Static current IQOFF VST = 5 V, Except ISTB 35 70 pA
Output off control voltage VSTH 2 0 VIN V


3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load. 4 This is the continuous current drawn from the battery with no load connected, but with the input high. 5 The measured current is in the load pin only. 6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current