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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
PC3SD11NXZB Sharp Microe  6-SMD  09+    278 
    Shenzhen Lxpart Technology Co...
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PC3SD11NXZB Datasheet

f I -
L __ ---- ' L; . 1200A 600A
300A


PC3SD11NXZB Price
1 Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above those indicated in the Theory of Operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air (TA = 250C). 3 24_lead TSSOP; TjA= 850C/W. Maximumintemalpower dissipation (PD) should be derated for ambient temperature (TA) such that PD 1500C TA)/TjA. 4 TjA of 85'C/W is on a 4-layer board (2s 2p).
PC3SD11NXZB on stock

Common emitter IC/IB = 30
Single nonrepetitive 7
Ta=1I JO _ 55
_ 25


Parameter Typ Unit Conditions
VSD Diode forward voltage (1J 0.85 v VGS = OV, IS = 0.6A
trr Reverse recover,/ time 70 ns VGS=OV, IF=0.6A IR = O.1A