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PC74BOXC10 PC74BOXC10 PC74BOXC10 Datasheet

CHARACTERISTIC SYMBOL RATING UNIT
3BH41 100 V
Repetitive Peak Reverse 3GH41 VRRM 400
Voltage 3JH41 600
Average Forward Current IF (AV) 3O A
Peak One Cycle Surge Forward Current (Non Repetitive) IFSM 140 A
Junction Temperature Tj - 40150 oC
Storage Temperature Range Tstg - 40150 oC


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Parameter Symbol Rating Unit
Collector to 2SB0710 VCBO -30 V
base voltage 2SB0710A -60
Collector to 2SB0710 VCEO -25 V
emitter voltage 2SB0710A -50
Emitter to base voltage VEBO -5 V
Peak collector current ICP -1 A
Collector current Ic -500 mA
Collector power dissipation Pc 200 mW
Junction temperature Ti 150 oC
Storage temperature Tstg -55 to +150 oC


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O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBAproducts, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. ! The products described in this document are subject to the foreign exchange and foreign trade laws. O The Tnformation contained herein is presented only as a guide _for the appljcations of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights oTthe third parties which may result from its use. No license is granted _ by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. O The i;formation contained herein is subject to change without notice.