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PC74F1245D PC74F1245D PC74F1245D Datasheet
Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain a 4.700 pF chip capacitor, located close to the module, and a 22 pF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Q? c) Is the source impedance ZG=50Q?
PC74F1245D PC74F1245D PC74F1245D Price

DescrIptIon Symbol CharacterIstIcs mln. Ityp. I max. Unlt Condltlons


PC74F1245D PC74F1245D PC74F1245D on stock

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PARAM ETER SYM BOL MIN TYP MAX UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V 30 V ID=250ccA, VGS=OV
Zero Gate Voltage Drain Current IDSS 0 5 ccA VDS=30V, VGS=OV
Gate-Body Leakage IGSS 100 nA VGS=+20V, VDS=OV
Gate-Source Threshold Voltage VGS(th, 1 0 V ID=250ccA, VDS= VGS
Static Drain-Source On-State Resistance (1) RDSfon, 0 02 0 03 VGS=10V, ID=12.6A VGS=4.5V, ID=10.6A
Forward Transconductance (3) g 1 7 5 S VDS=15V'ID=6A
DYNAMIC (3)
Input Capacitance Cm 1800 pF
Output Capacitance C 289 pF VDS=25V, VGS=OV, f=lM Hz
Reverse Transfer Capacitance C 1 78 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on, 5 5 ns
se Time t 8 7 ns VDD =1 5Y' ID=6A
Turn-Off Delay Time td(off) 33 ns RG=6.0 I , VGS=10V
Fallme ff 8 5 ns
Gate Charge Qa 1 9 4 nC VDS=15V'VGS=5V, ID=3.5A
Total Gate Charge Q 35 7 nC
Gate-Source Charge Q 5 5 nC VDS=15V'VGS=10V, ID=3.5A
Gate-Drain Charge Q 7 0 nC
SOU RCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0 95 V Tj=250C, ls=6A, VGS=OV
Reverse Recovery Time (3) tr 20 5 ns Tj=250C, IF=6A,
Reverse Recovery Charge (3) Q 41 5 nC di/dt= 100A/ocs