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PC74F244D Datasheet

					Ta=25 0C			Ta=-4085
CHARACTERISTIC	SYMBOL	TEST CONDITION		Vcc	MIN.	TYP.	MAX.	MIN.	MAX.	UNIT
High-Level Input Voltage	VIH			2.0 3.0 5.5	1.50 Vcc x 0.7			1.50 Vcc x 0.7		V
Low-Level Input Voltage	VIL			2.0 3.0 5.5			0.50 Vcc x 0.3		0.50 Vcc x 0.3	V
High-Level	VOH	VIN=VIL	Io\|I= -50pA	2.0 3.0 4.5	1.9 2.9 4.4	2.0 3.0 4.5		1.9 2.9 4.4		V
Output Voltage	VOH	VIN=GND	Ioii= -4mA IOIi= - 8mA	3.0 4.5	2.58 3.94			2.48 3.80		V
Low-Level	VOL	VIN=VIH	IOL=50PA	2.0 3.0 4.5		0.0 0.0 0.0	0.1 0.1 0.1		0.1 0.1 0.1	V
Output Voltage	VOL	VIN=VCC	IOL=4rnA IOL=8rnA	3.0 4.5			0.36 0.36		0.44 0.44	V
Input Leakage Current	IIN	VIN=5.5V or GND		05.5			±0.1		±1.0
Quiescent SuWly Current	Icc	VIN=VCC or GND		5.5			2.0		20.0	A

PC74F244D Price

Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Dual internal banks controlled by BAO (Bank Select) Programmable Wrap sequence (Sequential / Interleave) Programmable burst length (1, 2, 4, 8 and 16) Read latency (2) ..Prefetch Read latency (4) coAuto precharge and without auto precharge wAuto refresh and Self refresh ..Single 3.3 V + 0.3 V power supply Interface: LVTTL Refresh cycle: 4K cycles / 64 ms 168-pin dual in-line memory module (Pin pitch = 1.27 mm) Unbuffered type Serial PD
PC74F244D on stock

~MSG		VDS = 3V ID = 10 mA

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