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PC74F863D PC74F863D PC74F863D Datasheet

28C64A-15 28C64AI-15 28C64A-20 28C64AI-20 28C64A-25 28C64AI-25
Symbol Parameter Min Max Min Max Min Max Units
tWc Write Cycle Time 10 10 10 ms
tAS Address Setup Time O O O ns
tAH Address Hold Time 100 120 100 ns
tcs Write Setup Time O O O ns
tCH Write Hold Time O O 0 ns
tcw(9) CE Pulse Time 150 150 150 ns
tOES OE Setup Time 10 10 10 ns
tOEH OE Hold Time 10 10 10 ns
tWp(9) WE Pulse Width 150 150 150 ns
tDS Data Setup Time 70 70 70 ns
tDH Data Hold Time O O O ns
tINIT(l) Write Inhibit Period After Power-up 5 20 5 20 5 20 ms
tBLC(1)(10) Byte Load Cycle Time 10 100 10 100 10 100 US


PC74F863D PC74F863D PC74F863D Price

Parameter Test condition Symbol Min Typ. Max Unit
Diode capacitance f=l MHz, VR = O CD O5 pF
f=1MHz7VR=1V CD 0.37 0.5 pF
f=lMHz,VR=20V CD 0 23 0.35 pF
Forward resistance t = 100 MHz, IF = 1 mA rf 10 20 Q
f = 100 MHz, IF = 10 mA rf 2.0 3.8 Q
f = 100 MHz, IF = 100 mA rf O8 1.35 Q
Charge carrier life time IF =10 mA,IR = 6 mA,iR = 3 mA trr 1.8 LLS


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L O O L O o L O o L O O r - r - c o c o L O r n 4 4 0 0 - a m ) D J a d L u a l a S D j a l q O M O l l y L u r l l I J ! X D I N

Inputs0) Outputs
R/W OE UB LB SEM l/09-17 l/00-8 Mode
H X X X X H High-Z High-Z Deselected: Power-Down
X X X H H H High-Z High-Z Both Bytes Deselected
L L X L H H DATAIN High-Z Write to Upper Byte Only
L L X H L H High-Z DATAIN Write to Lower Byte Only
L L X L L H DATAIN DATAIN Write to Both Bytes
L H L L H H DATAOUT High-Z Read Upper Byte Only
L H L H L H High-Z DATAOUT Read Lower Byte Only
L H L L L H DATAOUT DATAOUT Read Both Bytes
X X H X X X High-Z High-Z Outputs Disabled