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PC74HC126P Datasheet
second. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array, (if it is not already programmed before) executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
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PARAMETER VALUE
Input Pulse Level(for 3.3V l/0) O t0 3.OV
Input Pulse Level(for 2.5V l/0) O t0 2.5V
Input Rise and Fall Time(Measured at 20% t0 80% for 3.3V l/0) 1.OV/ns
Input Rise and Fall Time(Measured at 20% t0 80% for 2.5V l/0) 1.OV/ns
Input and Output Timing Reference Levels for 3.3V 1/0 1.5V
Input and Output Timing Reference Levels for 2.5V l/0 VDD0/2
Output Load See Fig.1


PC74HC126P on stock

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD= 70A 1.5 V
Reverse Recovery Time trr ISD = 70A, dISD/dt = 100A/as 125 ns


lEval Kit Temperature Range Board Type l
lSi91 81 DB -40 t0 850C Surface Mount