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PC74HCT03DSMD PC74HCT03DSMD PC74HCT03DSMD Datasheet

Definition	Symbol	Dimension [mm]	Tolerance [mm]
Compartment width Compartment length Compartment height Sprocket hole diameter Compartment hole diameter Sprocket hole pitch Distance center hole to center compartment Pitch of the component compartments Tape width Distance edge to center of hole Distance center hole to center compartment Distance compartment to edge Overall thickness Thickness tape	Ao Bo Ko Do PO P2 P1 W E F G T2 T	5.1 6.0 1.3 1.5 1.5 4.0 2.0 8.0 12.0 1.75 5.5 0.75 2.5 0.3	+ 0.2 + 0.2 max. +0.1 1-0 min. + 0.05 + 0.1 + 0.3 + 0.1 + 0.05 min. max. max.

PC74HCT03DSMD PC74HCT03DSMD PC74HCT03DSMD Price

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
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____-.- .-- - -- . Short Circuit Current Limit Thermal Shutdovrn - -. . ---- .

Characteristic	Symbol	Rating	Unit
Vertical Supply Voltage	Vcc	16	V
Horizontal Supply Current	lcc	25	mA
Power Dissipation(Ta = 750C)	PD	500	mW
Operating Temperature	Topr	- 20+75	oC
Storage Temperature	Tstg	- 55+150	oC
Output Current(Pin 2, Pin 10 and Pin 16)	lo	15	mA

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