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PC74HCT125PB PC74HCT125PB PC74HCT125PB Datasheet

Ol Type Designation Show FMu-12s as FMU12S. ~Polarity:Rectifier Symbols QJLot Number (Laser Marking) 1st :Year(LastNumberofADYear) 2nd : Month (0~9, 0, N, D) 3rd, 4th: Day T0220 Type (FM or CT Type, single chip) M2. oi Type Designation:Omit Last Letter Show FML-G12S as FMLG12. Ol ~Last Letter of Type Designation ' ~Polarity:Recitifier Symbols qDLot Number (l_aser Marking) 1st :Year(LastNumberofADYear) 2nd : Month (0~9, 0, N, D) 3rd, 4th: Day T03P Type (FM or CT Type) Oi Type shown in full designation However, CTB-34/34S/34M are marked as 'U-G3DR Is marked as CTUG3DR. Oi ~~TIBRCTc:f(e,Symbols ~Lot Number; 1) ML U, G and L Types First Number :Last Digit of AD Year Second Number :Month Third and Fourth Numbers:Day Fifth Number : None 2) For types CTB-34/34S/34M, the fifth letter shows type designation. If no fifth number, the type is CTB-33 0r CTB-34. 3) Marking Color:Silver MI-1 0/1 5 Type - Oi Ml-lO/ls is die-stamped on the top of the case. - ~RectifierSymbols ~LotNumber: First Number :Peak Reverse Voltage: ' (Letter) 0=50V,1-100V,2=200VL 4 - 400V, 6 = 600V, C=1000V Second Number :Last Digitof AD Year Third Number :Month Fourth and Fifth Numbers:Day Sixth Number :Production number and U:Voltage Doubler Type
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	Parameter	Min	Typ.	Max	Units	Conditions
Is	Continuous Source Current (Body Diode)			44	A	MOSFET symbol showing the
ISM	Pulsed Source Current (Body Diode) Oi			180	A	integral reverse p-n junction diode.
VSD	Diode Forward Voltage			1 5	V	TJ = 250C, Is = 26A, VGS = OV
trr	Reverse Recovery Time		160	240	nS	TJ = 25aC, IF = 26A
Qrr	Reverse RecoveryCharge		1 3	2 0	¨C	di/dt = 100A/ps
ton	Forward Turn-On Time	Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
td(on) tr	Turn-on Delay Time Rise Time	VDD = 50 V ID = 3.5 A RG = 4.7 I VGS = 10 V (Resistive Load, see fig. 3)		6.5 1 5		ns ns
Qg Qgs Qgd	Total Gate Charge Gate-Source Charge Gate-Drain Charge	VDD = 80 V ID = 5A VGS = 10 V		14 6 4	18	nC nC nC

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