| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| PC74HCT163DT | PHL | 08+ | in Stock | 156 |
|
PC74HCT163DT Datasheet
PC74HCT163DT Price
PC74HCT163DT on stock '4 P005RGl/11:ViN= 7V,Io=5mA t0 1.OA PQ09RGl/1 1:VlN=llV, Io=5mA t0 1.OA P012RGl/11:ViFa=14V, Io=5mA t0 1.OA 's P005RGl/11:V1N= 6 t0 16V PQ09RGl/11:VlN=10 t0 20V P012RGl/11:ViN=13 t0 23V '6 P005RGl/11:V1N= 7V P009RGl/11:ViN=llV P012RGl/11:ViN=14V '7 Input voltage shall be the value when output voltage is 95% in comparison with the initial value. 's In case of opening control terminal, output voltage turns on. The CY7C1352F has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence ofthe burst counteris determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use AO and Al in the burst sequence, and will wrap-around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. |