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PC74HCT165N PC74HCT165N PC74HCT165N Datasheet

Items Symbols Test Conditions Min Typ. Max Units
Zero Gate Voltage Collecter Current ICES VGE~OV VCE=600V Ti=250C 1O mA
Gate-Emitter Leackage Current IGES VCE=OV VGE=+20V 100 nA
Gate-Emitter Threshold Voltage VGE (th) VCE=20V lc=15mA ' . 3 0 4.5 6 0 V
Collecter-Emitter Saturation Voltage VCE (sat) VGE=15V lc=15A 2.7 3 5 V
Input Capacitance CieS VGE=OV 1400 pF
Output Capacitance Coes VCE=10V
Reverse Transfer Capacitance Cres f=lMHz
ton Vcc=300V 0.4 0.8
Turn-on Time tr lc=15A O3 0.6
toff VGE=+15V O6 1O
Turn-off Time tf RG=150Q O2 0.35
Diode Forward On-Voltage VF IF=15A VGE=OV 2.5 V
Reverse Recovery Time ' trr IF-15A -dildt=501Vys VGE=-IOV 300 ns


PC74HCT165N PC74HCT165N PC74HCT165N Price

l l l VDS= 10V
|[ i=l mA
1


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VCE- - 2V
7
- - J J f
l - J f f
J f
1 f J


These resistive elements are aligned together to have a common sensitive axis (indicated by arrows on the pinouts) that will provide positive voltage change with magnetic fields increasing in the sensitive direction. Because the output only is in proportion to the one-dimensional axis (the principle of anisotropy) and its magnitude, additional sensor bridges placed at orthogonal directions permit accurate measurement of arbitrary field direction. The combination of sensor bridges in two and three orthogonal axis permit applications such as compassing and magnetometry.