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PC74HCT175T652 PC74HCT175T652 PC74HCT175T652 Datasheet

Parameter	Symbol	Test Conditions		Rating	Unit
Maximum RMS Forward Current	IF(RMS)	@ +25IC heatsink temperature double side cooled		2500	A
Maximum Peak One-Cycle Forward	IFSM	t= 10ms	Sinusoidal Halfwave, 100% VRRM	10930	A
Non-Repetitive Surge Current		t= 8.3ms	Reapplied, Initial Tj = +180IC	11450	A
		t= 10ms	Sinusoidal Halfwave, No Voltage	13000	A
		t= 8.3ms	Reapplied, Initial Tj = +180IC	13600	A
Maximum l2t for Fusing	12t	t= 10ms	Sinusoidal Halfwave, 100% VRRM	598	A2S
		t= 8.3ms	Reapplied, Initial Tj = +180IC	546	A2S
		t= 10ms	Sinusoidal Halfwave, No Voltage	846	A2S
		t= 8.3ms	Reapplied, Initial Tj = +180IC	772	A2S
Maximum l2\/t for Fusing	12~t	t = 0.1 t0 10ms, no voltage reapplied		8460	A2x/t
Threshold Voltage, Low Level	VF(TO)1	Tj = +1 80IC, (16.7% x x IF(AV) < I < # x IF(AV		0.78	V
Threshold Voltage, High Level	VF(T0)2	Tj = +1 80IC, (l > # x IF(AV		0.94	V
Forward Slope Resistance, Low Level	rf1	Tj = +1 80IC, (16.7% x x IF(AV) < I < # x IF(AV		0.35	ml
Forward Slope Resistance, High Level	rf2	Tj = +1 80IC, (l > # x IF(AV		0.26	ml
Maximum Forward Voltage Drop	VFM	Tj = +180IC, lpk = 1500A, tp = 10ms		1.31	V

PC74HCT175T652 PC74HCT175T652 PC74HCT175T652 Price

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PC74HCT175T652 PC74HCT175T652 PC74HCT175T652 on stock






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DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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