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PC74HCT244P.652 PC74HCT244P.652 PC74HCT244P652 Datasheet
-24.1 -49.0 -71.8 -91. 7 -108.8 -121. 7 -133.2 -143.2 -151.7 -159.3 -166.0 -172.4 -178.0 177.1 172.5 168.2 163.9 160.5 156.2 152.0 148.5 145.7 142.3 139.5 137.0 133.9 131.7 129.2 127.0 124.6
PC74HCT244P.652 PC74HCT244P.652 PC74HCT244P652 Price

REG103-Adj. : : Vou r = 3.3V, Viv, = 4.3V, CFB = O.OlccF : ' ' ' : Cour=0 :
: : _ Cour=lOccF :
y 7


PC74HCT244P.652 PC74HCT244P.652 PC74HCT244P652 on stock

Limits
Symbol Parameter Test conditions Min Typ Max Unit
V (BR) DSS Drain-source breakdown voltage ID = ImA, VGs = OV 800 v
V (BR) GSS Gate-source breakdown voltage IGS = +100ffA, VDS = OV ±30 v
IGSS Gate-source leakage current VGS = +25V, VDS = OV ±10
IDSS Drain-source leakage current VDS = 800V, VGS = OV 1 mA
VGS (th) Gate-source threshold voltage ID = 1ffiA, VDS = 10V 2 3 4 v
rDS (ON) Drain-source on-state resistance ID = 3A, VGS = 10V 1 26 1 64
VDS (ON) Drain-source on-state voltage ID = 3A, VGS = 10V 3 78 4 92 v
yfs Forward transfer admittance ID = 3A, VDS = 10V 4 2 7.0 S
Ciss Input capacitance 1380 pF
Coss Output capacitance VDS=25V,VGS=Oy f=1MHz 140 pF
Crss Reverse transfer capacitance 28 pF
td (on) Turn-on delay time 25 ns
tr Rise time VDD = 200y ID = 3A, VGS = 10V, 28 ns
td (off) Turn-off delay time RGEN = RGS = sol 185 ns
tf Fall time 46 ns
VSD Source-drain voltage Is = 3A, VGS = OV 1.0 1 5 v
Rth (ch-c) rhermal resistance Channel to case 0 83 IC/W


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