PC74HCT251P.652 PC74HCT251P.652 PC74HCT251P652 Datasheet| Drain to source breakdown voltage | V(BR)OSS | -400 | | | V | ID = -10 mA, Vcs = 0 | | Gate to source leak current | IGSS | | | ±1 | pA | VGS = +20 V, VDS = O | | Zero gate voltage drain current | IDSS | | | 1 | mA | VDS = -320 V, Vcs = 0 | | Gate to source cutoff voltage | VGS(off, | -2.0 | | -5.0 | V | ID = -1 mA, VDS = -10 V | | Static drain to source on state | RDScon, | | 5 | 7 | | ID = -1 A, VGS = -15 V" | | resistance | | Forward transfer admittance | lyf1 | 0.4 | 0.7 | | S | ID = -1 A. VDS = -20 W' | | Input capacitance | Ciss | | 520 | | pF | VOs = -10 V, Vcs = 0, | | Output capacitance | Coss | | 110 | | pF | f=l MHz | | Reverse transfer capacitance | Crss | | 15 | | pF | | Turn-on delay time | td(on, | | 10 | | ns | ID = -2 A, VGS = -15 V, | | Rise time | t | | 25 | | ns | R= 15 | | Turn-off delay time | td(of0 | | 45 | | ns | | Fall time | tf | | 35 | | ns | | Body to drain diode forward | VDF | | -0.8 | | V | IF = -1 A, VGS = 0 | | voltage | | | | | | | |
PC74HCT251P.652 PC74HCT251P.652 PC74HCT251P652 Price| Items | Symbols | Test Conditions | Min | Typ | Max | U nits | | | RmO-d | Fransistor | | | 0.42 | CiW | | | Rmci-o | Diode J | | | | 'c/w | | | Rmcef) | With Thermal Compound | | 0 12 | | c/w | | | | | | | |
PC74HCT251P.652 PC74HCT251P.652 PC74HCT251P652 on stock| | | | Ratings | | | Parameter | Symbol | Conditions | mi¨n | typ | max | Unit | | | ICBO | VCB=800V, IE=O | | | 10 | | | Collector Cutoff Current | ICES | VCE=1600V, RBE=O | | | 1 0 | mA | | Emitter Cutoff Current | IEBO | VEB=4V, IC=O | 40 | | 200 | mA | | | | | | | |
Application The applications circuit for the TQM7138 is very simple since most of the critical components are included inside the module. There are several important considerations when using the module in a phone design. First of all, it is important that the source impedance of the Vcc power supply be very low. This is because the high current demand during the modulation peaks of the CDMA waveform can introduce voltage ripple at the symbol rate that will introduce additional inter-modulation distortion or Adjacent Channel Power distortion at the output of the power amplifier. If the power amplifier has a quiescent current of 100 mA and a peak current demand in excess of l amp, it is possible to see 900 mA change in the current required from Vcc as the modulated signal moves from one extreme to the other. If the power supply source
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