| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | -400 | v |
| | Continuous Drain Current (Tc=250C) | 1.5 | A |
| ID | Continuous Drain Current (Tr.=lOOoC) | -0.95 |
| IDM | Drain Current-Pulsed ci) | 5 | A |
| VGS | Gate-to-Source Voltage | ±30 | v |
| EAS | Single Pulsed Avalanche Energy | 1 15 | mJ |
| IAR | Avalanche Current ci) | -1.5 | A |
| EAR | Repetitive Avalanche Energy CD | 3.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -4.0 | V/ns |
| PD | Total Power Dissipation (TA=250C) * | 2.5 | W |
| Total Power Dissipation (Tc=250C) Linear Derating Factor | 36 0.29 | W W/ |
| TjTsTG | Operating Junction and Storage Temperature Range | - 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds | 300 |
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PC74HCT258P PC74HCT258P PC74HCT258P on stock| | l l l l | | | | | | ll-L.J '_ I Ti=1 250C: ' , - - -. , -l- 7+ |
| | l l | | | | | | | VLL=OUUV | |
| | | | | | | | | I | Bl= | -IE | ·2= | | |
| | | | | | | | | | | | | | |
| | .Qr | | | | | | | | | | | | |
| I I I I | | | | | | | | | | | | |
| | -t l l | | | | | | | | | | | | |
| | | | | | | | | | | | | |
| Symbol | Parameter | Value | Unit |
| | Ambient Operating Temperature | 0 t0 70 | oC |
| l BlAS | Temperature Under Bias | -50 t0 125 | oC |
| TSTG | Storage Temperature | -65 t0 150 | oC |
| Vl0(2) | Input or Output Voltage | -0.6 t0 4 | V |
| Vcc | Supply Voltage | -0.6 t0 4 | V |
| VID | Identification Voltage | -0.6 t0 1 3.5 | V |
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