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PC74HCT27T653 PC74HCT27T653 PC74HCT27T653 Datasheet

Parameter	Symbol	Conditions	mi¨n	typ	max	Unit
Collector to base voltage	VCBO	Ic = 10DA,IE = 0	30			V
Emitter to base voltage	VEBO	IE = 10cd,Ic = 0	3			v
Forward current transfer ratio	hFE*	VCB = 6V, IE = -lmA	40		260
Base to emitter voltage	VBE	VCB = 6V, IE = -lmA		0.72		v
Transition frequency	fT	VCB = 6V, IE = -lmA, f= IOOMHz	450	650		MHz
Common emitter reverse transfer capacitance	Cre	VCE = 6V,Ic = ImA, f= 10.7MHz		0.8	l	pF
Power gain	PG	VCB = 6V, IE = -lmA, f= IOOMHz		24		dB
Noise figure	NF	VCB = 6V, IE = -lmA, f= IOOMHz		j.j		dB

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ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD7893 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
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Parameter	ST083S	Units	Conditions
VTM Max. peak on-state voltage	2.15	V	ITM= 300A, Tj = Tj max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold voltage	1.46		(16.7% x # x IT(AV) < I < # X IT(AV' Tj = Tj max.
VT(T0)2 High level value of threshold voltage	1.52		(l > # x IT(AV, Tj = Tj max.
rti Low level value of forward slope resistance	2.32	ml	(16.7% x # x IT(AV) < I < # X IT(AV' Tj = Tj max.
rt2 High level value of forward slope resistance	2.34	ml	(l > # x IT(AV' Tj = Tj max.
IH Maximum holding current	600	mA	Tj = 25aC, IT > 30A
IL Typical latching current	1000	mA	Tj = 25aC, VA= 12V, Ra = 61 , IG= 1A

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