MOT > Map-17 > QS74FCT2245CTZ

QS74FCT2245CTZ，there are the best QS74FCT2245CTZ suppiers all over the world here.These are the list and detailed contact method of QS74FCT2245CTZ suppliers all over the world as follows.You can buy or get informations of QS74FCT2245CTZ through email , message or tel.

suppliers of QS74FCT2245CTZ and PDF data of QS74FCT2245CTZ

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

QS74FCT2245CTZ Datasheet


Characteristic	Symbol	ER2A	ER2B	ER2C	ER2D	ER2E	ER2G	ER2J	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	50	100	150	200	300	400	600	V
RMS Reverse Voltage	VR(RMS)	35	70	105	140	210	280	420	V
Average Rectified Output Current @TL = 1100C	lO	2 0							A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	50							A
Forward Voltage @IF = 2.OA	VFM	O95				1.25		1.7	V
Peak Reverse Current @TA = 250C At Rated DC Blocking Voltage @TA = 1000C	IRM	5 0 500							pA
Reverse Recovery Time (Note l)	trr	35							nS
Typical Junction Capacitance (Note 2)	cj	25							pF
Typical Thermal Resistance (Note 3)	ROJL	20							K/W
Operating and Storage Temperature Range	Tj, TSTG	-65 to +150							oc
Note: 1. Measured with IF = 0.5A, IR = 1.OA, lr, = 0.25A, 2. Measured at l.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.Omm2 land area.

QS74FCT2245CTZ Price

Parameter		Symbol	Conditions	Rating	Unit
Laser diode	Optical output power	Pf	cw	6	mW
	Forward current	If	cw	100	mA
	Reverse voltage	Vrl		2	V
Photodiode	Reverse voltage	Vrd		20	V
Photodiode	Forward current	lfd		2	mA
Operating case temperature		Tc		-10+85	oC
Storage temperature		Tstg		-40+85	oC

QS74FCT2245CTZ on stock

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT	TEST CONDITION
Average Luminous Intensity	IV	500	1300		uCd	IF= 10 mA
Peak Emission Wavelength	p/Hue		630/621		nm	IF= 20 mA
Spectral Line Half-Width			40		nm	IF= 20 mA
Forward Voltage, Per Segment	VF		2.1	2.6	V	IF= 20 mA
Reverse Current, Per Segment	IR			100	A	VR= SV
Luminous Intensity Matching Ratio	Iv_m			21		IF= 10 mA

Parameter	Test condition	Symbol	Value	Unit
Reverse voltage		VR	6	V
DC forward current	Tamb60 0C	IF	30	mA
Surge forward current	tp i10¨S	IFSM	0 5	A
Power dissipation	Tamb60 0C	Pv	100	mW
Junction temperature		Ti	100	oC
Operating temperature range		Tamb	- 40 to +100	oC
Storage temperature range		Tstg	- 55 to +100	oC
Soldering temperature	t15s	Tsd	260	oC
Thermal resistance junction/ ambient	mounted on PC board (pad size > 16 mm2)	RthjA	400	K/W