| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| QS74FCT2257ATP | QUALITY SEMI | 475 |
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QS74FCT2257ATP Datasheet Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. VT can be -3.OV pulse of less than 10ns. QS74FCT2257ATP Price Noise: As a resolution orlowerinformation limit, noise is established not only by the deteaor. Other noise sources are: - Radiated and conducted RF signals - Subsequent amplification or signal conditioning stages . Power supply noise . Components, such as high value resistors and capacitors (tantalum and aluminum electrolytic) - Mechanicalcontacts and poor solder joints - Shock and vibration induced microphonics . Outside thermalinfluences on the detector other than the desired infrared input, i.e. drafts, and radiation from nearby hot components All of these noise sources should be considered care- iully when the information signal is(1mV tor vottage mode operation and 20 mV for current mode operation. Gate Protection: Treat as static sensitive devices because voltages t0 100 votts can be generated in the crystal by rapid temperature changes. If the intemal resistor is not connected to some path to ground, the full voltage will be presented to the JFET gate wrth possible JFET failure. The electroded sensing crystal (a dielectric sandwich) can be regarded as a self-generating capacitor with an RC discnarge time constant of greater than 5 minutes. Light Leakage: Slight sensrtivrty to visible light leak- ing through the glass-to-metal seal on the base may be obseNed. QS74FCT2257ATP on stock
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