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QS74FCT244AS0 Datasheet

Parameter Symbol Conditions mi¨n typ max Unit
ICBO VCB = -400V,IE = o -1
Collector cutoff current ICEO VCE = -100V,IB = O -1
Emitter cutoff current IEBO VBE = -5V,IC = 0 -1
Collector to emitter voltage VCEO Ic = -lmA,IB = 0 -400 v
hFEl" VCE= -5V,IC-50mA 80 280
Forward current transfer ratio hFE2 VCE-5V,IC_300mA*2 10
Collector to emitter saturation voltage VCE(sat) Ic-lOOmA,IB_lOmA*2 - 0.25 - 0.5 v
Base to emitter saturation voltage VBE(sat) Ir-lOOmAIB_lOrrlA*2 - 0.8 -1.2 v
Transition frequency fT VCB-10V,IEO.lAf= lMHz*2 25 MHz
rurn-on tlme to Ic = -lOOmA, RL = 1.5kl 0.4 1.0 0S
Storage time ts IBl = -lOmA,IB2 = lOmA 5.5 6.5 0S
Collector current fall time tf Vcc = -150V 0.5 1.0 0S
Collector output capacitance Cob VCB-10VIE0f= 1MHz 20 40 pF


QS74FCT244AS0 Price

Parameter Description Conditions Min Typ.[3] Max Unit
VDR Vcc for Data Retention 1.5 3.6 V
ICCDR Data Retention Current Vr,c = 1.5V L 15 LIA
CEi > Vcc - 0.2V or CE2 <0.2V VIN > VCC - 0.2V or VIN < 0.2V LL 10
tCDR[8] Chip Deselect to Data Retention Time 0 ns
tR[9] Operation Recovery Time tRC ns


ILOAD=0
R L=
VSHN= OPEP (HIGHl
VSHI )N= ov