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QS74FCT373ATZ Datasheet

VCE = -10 V
Ta, = 250C
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QS74FCT373ATZ Price
I SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V(BR)DSS VGS(TO) IDSS IGSS +V(BR)GSS RDScON) Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate source breakdown voltage Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA; Tj = -55aC VDS = VGS; ID = 1 mA Tj = 175aC Tj = -550C VDS = 30 V; VGS = 0 V; Tj = 1750C VGS = +10 V; VDS = 0 V Tj = 175aC IG = +1 mA; VGS = 10 V; ID = 25 A Tj = 1750C 30 27 2.0 1.0 16 3.0 0.05 0.02 15 4.0 4.4 10 500 1 20 18 33.5 V V V V cC V l


CHARA CTERISTICS (at TA = 250C unless otherwise specified) Collector-emitter breakdown voltage -IC = 1 mA; IB = 0 -V(BR)CEO min. Collector-base breakdown voltage -IC = 10 mA ; IE = O -V (BR)CBO m in. Em itter-base breakdown voltage -IE = 10 mA; lC = O -V(BR)EBO min. Collector cut-off current -VCB = 20 V; IE = O V -ICBO max Emitter cut-off current VBE =3 V; IC =O IEBO max Output capacitance at f = 1 MHz IE = 0; -VCB = 5 V Ce max Input capacitance at f = 1 MHz lC = O; -VBE = 0.5 V Ce max