| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| QS74FCT377CTSO | QSI | 器件原封装 | 06+ | 【原装订货，5-10天，飞乐飞公司诚心为 | 768 |
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| QS74FCT377CTSO | Q | SOP20W | 2007+ | E-mailtome. | 9985 |
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QS74FCT377CTSO Datasheet
QS74FCT377CTSO Price DEFINITIONS VF = Instantaneous forward voltage (pw = 300as, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/ffs (See Figure 9), summation of to + tb. to = Time to reach peak reverse current at dIF/dt = 100/Vffs (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9) QRR = Reverse recovery charge. CJ = Junction Capacitance. RejC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. QS74FCT377CTSO on stock
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. |
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