| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| QS74FCT574ATP | IDT/Q | 9908/0005 | 107 |
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| QS74FCT574ATP | IDT/Q | DIP20 | 2007+ | E-mailtome. | 9985 |
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QS74FCT574ATP Datasheet This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very smallparametric changes could cause the device not to meet its published specifications. QS74FCT574ATP Price o r ' - L n c f , 2 a r - L O C V , C \ l ' O I ( 0 0 9 2 ) ( N O ) S O J 0 N V _ I S I S U _ I V _ I S - N O 0 k j r l O S - N I W J O QS74FCT574ATP on stock
The internal circuit is composed of 2 stages including buffer output, which provides high noise immunity and stable output. Power down protection is provided on all inputs and o t0 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V t0 3V system. It combines high speed performance with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. |
