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suppliers of QT113 and PDF data of QT113

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
QT113	Quantum		06+	in stock	10000	Shenzhen KHS Electronics Co., .. Contact:Tony Tel:86-755-61306257 Fax: Email: tony@khsdz.cn
QT113	QUANTUM		09+		200	shenzhen anywiser technology c.. Contact:lemon Tel:86-755-28049536 Fax: Email: lemon@anywiser.cn
QT113	Quantum		06+	in stock	10000	ShenZhen KHS Electronics Co.,L.. Contact:tony Tel:86-755-61306257 Fax:86-755-61306957 Email: tony@khsdz.cn

QT113 Datasheet

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
Vcl	High Voltage Clamp	Vin = 0.4 V -400C " Tj " 125 0C	320		510	V
Vce(sat)	Saturation Voltage of The Power Stage	le = 6A; Id = 80 mA; Vin = 4V			2	V
ls(on)	Control Circuit Supply Current				15	mA
Vs	Control Circuit Supply Voltage		4.5		5.5	V
ld(on)	Driver Stage Stand-by Current	Vin=4V			1 80	mA
Vd	Driver Stage Supply Voltage		5.5		16	V
ldiag	Diagnostic Current at Wich The Flag Switches	-400C " Tj " 125 0C	2.75		3.35	mA
VinH	High Level Input Voltage		4		5.5	V
VinL	Low Level Input Voltage		O		0.2	V
linH	High Level Input Current	Vin=5.5 V	20		600	CA
Vpos	Positive Threshold		2.8		3.2	V
Vneg	Negative Threshold		1.3		1.7	V
Vhys	Hysteresis Voltage		1.3		1.7	V
le (max)	Turn-Off Current	Vin = 4V -400C " Tj " 125 0C	7.3		8.8	A
toff	Switch-Off Time	le = 6 A (see note l)	10		80	ccS
VdiagH	High Level Diagnostic Output Voltage	Rflag=20 K l	4		4.5	V
VdiagL	Low Level Diagnostic Output Volatge	Rflag = 100 K[			0.1	V

QT113 Price

Sequential Measurement When the ADT7463 monitoring sequence is started, it cycles sequentially through the measurement of analog inputs and the temperature sensors. Measured values from these inputs are stored in Value registers. These can be read out over the serial bus, or can be compared with programmed limits stored in the Limit registers. The results of out-of-limit comparisons are stored in the Status registers, which can be read over the serial bus to flag out-of-limit conditions.
QT113 on stock

16M-bits Flash memory is a 2097152 bytes /1048576 words 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(Dlvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

All the four-needle EPSON mini-printer mechanisms (M150, M160, M163, M164 and M170) are now supported by a single A104B device. The A104B exercises the mechanism on the first power-up, and its type is sensed by counting tacho pulses per head cycle. The result is stored in the EEPROM, and on

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