QT411-ISSG Datasheet| Parameter | Symbol | Conditions | Values | Unit | | min | typ. | max | | Drain-source breakdown voltage | V(BR)DSS | VGS=OV, /D=0.25mA | 600 | | | V | | Drain-Source avalanche breakdown voltage | V(BR)DS | VGS=OV, /D=0.25A | | 700 | | | Gate threshold voltage | VGS(th) | /D=80kcAVGS= VDS | 2.1 | 3 | 3.9 | | Zero gate voltage drain current | DSS | VDS=600V, VGS=OV, Tj=250C, Tj=1500C | | 0.5 | 1 50 | UA | | Gate-source leakage current | GSS | VGS=30V, VDS=OV | | | 1 00 | nA | | Drain-source on-state resistance | RDS(on) | VGS=10V, /D=1.1A, Tj=250C Tj=1500C | | 2.7 7.3 | 3 | Q | | Gate input resistance | RG | 1MHz, open Drain | | 9 | | | | | | | | |
QT411-ISSG Price| lParameter | Test condition | Symbol | Min | Typ. | Max | Unit | | I Current Transfer Ratio | IF = 1.0 mA, VCE = 1.0 V | CTR | 1000 | | | % | | | | | | | |
QT411-ISSG on stock| TEST | SWITCH | | tPLH, tPHL | Open | | tPZL, tPLZ | Vcc | | tPZH, tPHZ | GND | | |
loff Supports Partial-Power-Down Mode Operation Edge-rate control circuitry for significantly improved noise characteristics Typical output skew < 250 ps ESD > 2000V TSSOP (19.6-mil pitch) and SSOP (25-mil pitch) packages Industrial temperature range of -400C to +850C
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