QTLP650D-RGBTR Datasheet| CHARACTERISTIC | SYMBOL | TEST CONDITION | MIN | TYP | MAX | UNIT | | Collector Cut-off Current | ICBO | VCB= -20V,IE=O | | | - 0.1 | A | | Emitter Cut-off Current | lEBO | VEB = - 6V, IC =O | | | - 0.1 | A | | Collector-Emitter Breakdown Voltage | V (BR) CEO | IC = -lOmA, IB = O | -20 | | | V | | Emitter-Base Breakdown Voltage | V (BR) EBO | IE = - O.lmA, IC = 0 | -6 | | | V | | DC Current Gain | hFE (1) (Note) | VCE = - 2V, IC = - O.1A | 120 | | 400 | | | nFE(2) | VCE = - 2V, IC = - 2A | 40 | | | | Collector-Emitter Saturation Voltage | V CE (sat) | IC = - 2A, IB = - O.1A | | | - 0.5 | V | | Base-Emitter Voltage | VBE | VCE = - 2V, IC = - O.1A | | | - 0.85 | v | | Transition Frequency | fT | VCE = - 2V, IC = - 0.5A | | 120 | | MHz | | Collector Output Capacitance | Cob | VCB = -10V, IE =O, f=lMHz | | 40 | | pF | | | | | | | |
QTLP650D-RGBTR on stock| PART NUMBER | PART MARKING | PACKAGE | LEAD FINISH | STATUS | | TB5DIMDW | TB5DIM | Gull-wing SOIC | NiPdAu | Production | | TB5DIMD | TB5DIM | SOIC | NiPdAu | Production | | TB5D2HDW | TB5D2H | Gull-wing SOIC | NiPdAu | Production | | TB5D2HD | TB5D2H | SOIC | NiPdAu | Production | | TB5DIMLDW | TB5DIML | Gull-wing SOIC | SnPb | Production | | TB5DIMLD | TB5DIML | SOIC | SnPb | Production | | TB5D2HLDW | TB5D2HL | Gull-wing SOIC | SnPb | Production | | TB5D2HLD | TB5D2HL | SOIC | SnPb | Production | | | | | |
Varistors are voltage-dependent, non-linear fesistotS whlch have symmetrical, sharp, breakdown charactoflstlcs similar to back-ta- back Zener diodes. They are desIgned for translont suppresslon In electrIcal circuits. Translents can fesult from the 8udden release of prevlously stored energy (EMP), or from extraneoua aources beyond the contfol of the circuit designer, such as Iightn{ng surges.
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