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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
QV1400ESP00120104 QUARTICS  BGA  04+    278 
QV1400ESP00120104 QUARTICS  BGA  04+  Genuine Original  11 
    SHENZHEN DONGVHENGXUAN TECHNOL..
  • Contact:WU
  • Tel:86-755-83238595
  • Fax:86-755-83238595
  • Email: szdcx888@163.com


QV1400ESP00120104 QUARTICS  BGA  04+    11 
    GD TECH UK
  • Contact:gdtechuk
  • Tel:44-870-4866758
  • Fax:44-1212402714
  • Email: gdtechuk@gmail.com


QV1400ESP00120104 QUARTICS  BGA  0417+  散新特价  1000 
    Shen Zhen JinShengDa Electroni..
  • Contact:Ruixinmslong
  • Tel:86-755-61333812
  • Fax:0755-61333820
  • Email: lulu.889@163.com
QV1400ESP00120104 QUARTICS  BGA  08+  True"Xin" service tr  122 
    Shenzhen Jishengda Technology ..
  • Contact:Martin Yang
  • Tel:86-755-83229077
  • Fax:86-755-83233919
  • Email: yxx8888@qq.com
QV1400ESP00120104 QUARTICS  BGA  04+    11 
    ShenZhen Sanhuizhengxing Techn..
  • Contact:Shine
  • Tel:86-755-82514855
  • Fax:86-755-82514877
  • Email: shin fe@sst-ic.cn
QV1400ESP00120104 QUARTICS  BGA  04+  In stock  11 
    B.T.chips(HK) Electronics Co.,..
  • Contact:Danna
  • Tel:86-755-29215002
  • Fax:86-0755-26001784
  • Email: dannabestlee@gmail.com


QV1400ESP00120104 QUARTICS  BGA  04+  Instock  11 
    B.T.Chips(HONGKONG)Electronics..
  • Contact:Ms.DannaLee
  • Tel:86-0755-29215002/26001784
  • Fax:86-0755-26001784
  • Email: dannabestlee@gmail.com

QV1400ESP00120104 Datasheet

Operating current Burst length = 1 1,2,3
( AS latency = 2) lcc, 100 mA tRC 2 rTiin
( ASlatency = 3) lcc, 1 10 mA
Standby current in power down ICC2P 6 mA CKE = VIL, tCK = 12 ns 6
Standby current in power down ICC2PS 4 mA CKE = VIL, tCK = o 7
(input signal stable)


QV1400ESP00120104 Price

Parameter Min Typ. Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = OV, ID = 250pA
CV(BR)DSS/CiTJ Breakdown Voltage Temp. Coefficient 0058 V/oC Reference t0 25aC, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 14 ml VGS = 10V, ID = 32A
VGS(th) Gate Threshold Voltage 2 0 4 0 V VDS = VGS, ID = 250pA
9fs Forward Transconductance 24 S VDS = 25V, ID = 32A~
25 VDS = 55V, VGS = OV
IDSS Drain-to-Source Leakage Current 250 UA VDS = 44V, VGS = OV, TJ = 1500C
Gate-to-Source Forward Leakage 100 VGS= 20V
IGSS Gate-to-Source Reverse Leakage -100 nA VGS= -20V
Qg Total Gate Charge 81 ID = 32A
Qgs Gate-to-Source Charge 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 30 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 12 VDD = 28V
tr Rise Time 78 ID = 32A
td(off) Turn-Off Delay Time 34 ns RG = 0.851
tf Fall Time 50 VGS = 10V, See Fig. 10
Ls Internal Source Inductance 7.5 nH Between lead, and center of die contact
ciss Input Capacitance 1970 pF VGS = OV
coss Output Capacitance 470 VDS = 25V
Crss Reverse Transfer Capacitance 120 f = 1.OMHz, See Fig. 5
EAS Single Pulse Avalanche Energy~ 700 190 mJ IAS = 32A, L = 0.37mH


QV1400ESP00120104 on stock

IF(AV) 1A
VRRM 600V
trr (typ) 20ns
VF (max) 1.5V


Type Reverse recovery time Forward voltage
Typ Sperrverzugszeit DurchlaBspannung
t[ns]1) VF [V] at/bei IF [A]
SUF 4001 ... SUF 4004 < 50 < 1.0 l
SUF 4005 ... SUF 4007 <75 < 1.7 l