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R.68EC2100AAM Datasheet

SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.016 fA
2 BF 220.1
3 NF 1.000
4 VAF 48.06 V
5 IKF 510.0 mA
6 ISE 283.0 fA
7 NE 2.035
8 BR 100.7
9 NR 0.988
10 VAR 1.692 V
11 IKR 2.352 mA
12 ISC 24.48 aA
13 NC 1.022
14 RB 10.00 l
15 IRB 1.000 o
16 RBM 10.00 l
17 RE 775.3 ml
18 RC 2.210 l
19(1) XTB 0.000
20(1) EG 1.110 eV
21(1) XTI 3.000
22 CJE 1.245 pF
23 VJE 600.0 mV
24 MJE 0.258
25 TF 8.616 ps
26 XTF 6.788
27 VTF 1.414 V
28 ITF 110.3 mA
29 PTF 45.01 deg
30 CJC 447.6 fF
31 VJC 189.2 mV
32 MJC 0.071
33 XCJC 0.130
34 TR 543.7 ps
35(1) CJS 0.000 F
36(1) VJS 750.0 mV
37(1) MJS 0.000
38 FC O780


R.68EC2100AAM Price

l- Gain (dB) ___ _
U I_oICIIL y \ /O) - _jpnc\i ( o~
VDD = 26 V
IDO = 70 mAl
I I I I
. I Output Pow er


R.68EC2100AAM on stock
It is important to note that the LH57512J and similar devices will erase with light sources having wave-length shorter than 4,000 A. Although erasure iimes will be much longer than with UV sources at 2,537 A, the exposure to fluorescent light and sunlight will eventually erase the LH57512J and exposure to them should be prevented to realize maximum system reliability. If used

]p·-yE(B1 VCEO IC = -1 rriA, IB = 0 -20 V
-y·(C) VEBO IE = -10 yA,Ic = 0 -7 V
]L·(E) ICBO VCB = -10 V, IE = 0 -100 nA
y.-(C) IEBO VEB = -5 V,IC = 0 -100 nA
+l-2 hFE VCE = -2 V,IC = -2 A 90 625
]p·y VCE(sat) Ic = -3 A,IB = - 0.1 A -1 V
77 fr VCB = -6 V,IE = 50 mA, f = 200 MHz 120 MHz
]Lf Cub VCB = -20 V, IE = 0, f= 1 MHz 85 pF