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R0805-102-J Datasheet

Limits
SVmb Parameter Test conditions Min T\ip Max U nit
IRRM Repetitive reverse current Ti=150IC, VRRM applied 10 rnA
VFM Forward voltage Ti=25YC, IFM=40A, instantaneous meas. 1 2 V
Rth lj-c) 0 33 YC/W
Rth lc-f) Contact thermal resistance Case to fin, conductive grease applied 0 09 YC/W
Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 MI


R0805-102-J Price
The LTC~1433/LTC1434 are monolithic pulse width modu- lated step-down DC/DC converters. By utilizing current mode switching techniques,they provide excellent AC and DCload and line regulation. Both devices operate at afixed frequency with the LTC1434 phase-lockable to an external clock signal.
R0805-102-J on stock
R WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/04

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V(BR)DSS V(BR)GSS VGS(TO) RDScON) 9fs IGSS IDSS Drain-source breakdown voltage Gate-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current VGS = 0 V; ID = 0.25 mA; Tj = -550C IG = +1 mA; VDS = VGS; ID = 1 mA T, = 175aC Tj = -550C VGS = 5 V; ID = 17 A VGS = 10 V; ID = 17 A Tj = 175aC VDS = 25 V; ID = 15 A VGS = +5 V; VDS = 0 V Tj = 175aC VDS = 55 V; VGS = 0 V; Tj = 175aC 55 50 10 1.0 0.5 12 1.5 28 26 40 0.02 0.05 2.0 2.3 35 32 74 1 20 10 500 V V V V V V l S cCA c cCA
Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 30 A; VDD= 44 V; VGS = 5 V 22.5 6 1 1 nC nC nC
td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 25 A VGS = 5 V; RG = io I Resistive load 14 77 55 48 21 1 1 0 80 65 ns ns ns ns
Ld Ld L Internal drain inductance Internal drain inductance Internal source inductance Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad 3.5 4.5 7.5 nH nH nH
Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f= 1 MHz 1 050 205 1 1 3 1400 245 1 50 pF pF pF