| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
R0K561664S000BE Datasheet
R0K561664S000BE Price DEFINITIONS: RL = Load resistor; see AC electrical characteristics for value. CL = Load capacitance includes jig and probe capacitance see AC electrical characteristics for value. RT = Termination resistance should be equal to Zou r of pulse generators. R0K561664S000BE on stock Synchronous circuitry allows for precise cycle control triggered by a positive edge clock transition. Synchronous signals include : all Addresses, all Data Inputs, all Chip Enables (E1#, E2, E3#), Address Advance/Load (ADV), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes are conducted with on-chip synchronous self- timed write circuitry. Asynchronous inputs include Output Enable (G#), Clock (CLK) and Snooze Enable (ZZ). The HIGH input of ZZ pin puts the SRAM in the power-down state.The Linear Burst order (LBO#) is DC operated pin. LBO# pin will allow the choice of either an interleaved burst, or a linear burst. All read, write and deselect cycles are initiated by the ADV LOW input. Subsequent burst address can be internally generated as controlled by the ADV HIGH input.
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