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R10-E1-W2-V700 Datasheet

SPECIFICATIONS (Tj =250C UNLESS OTHERWISE NOTED}
Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Static
Drain-Source Breakdown Voltage	V(BR)DSS	VDS = 0 V, ID = 250 yA	60			V
Gate-Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 yA	1		3	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS =20 V			100	nA
		VDS = 48 V, VGS = 0 V			1
Zero Gate Voltage Drain Current	IDSS	VDS = 48 V, VGS = 0 V, Tj = 1250C			50	yA
Zero Gate Voltage Drain Current	IDSS	VDS = 48 V, VGS = 0 V, Tj = 1750C			250	yA
On-State Drain Currenta	ID(on)	VDS > 5 V, VGS = 10V	120			A
		VGS = 10 V, ID = 30 A		0.0044	0 0052
		VGS = 4.5 V, ID = 20 A		0 0059	0 0072
! D,ain-Sour.e On-State Resistancea	DS(on)	VGS = 10 V, ID = 30 A, Tj = 1250C			0 0085	Q
! D,ain-Sour.e On-State Resistancea	DS(on)	VGS = 10 V, ID = 30 A, Tj = 1750C			0 010	Q
Forward Transconductancea	9fs	VDS = 15 V, ID = 30 A	30			S
Dynamicb
Input Capacitance	ciss			7560		pF
Output Capacitance	coss	VGS = 0 V, VDS = 25 V, f = 1 MHz		1050
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = 25 V, f = 1 MHz		570
Total Gate Chargec	Qg			155	220
Gate-Source Chargec	Qgs	VDS = 30 V, VGS = 10 V, ID = 85 A		28		nC
Gate-Drain Chargec	Qgd	VDS = 30 V, VGS = 10 V, ID = 85 A		44		nC
Turn-On Delay Timec	td(on)			15	25
Rise Timec	tr	VDD = 30 V, RL = 0.4 Q		90	130
Turn-Off Delay Timec	td(off)	ID 85 A, VGEN = 10 V, RG = 2.5 Q		95	140	ns
Fall Timec	tf	ID 85 A, VGEN = 10 V, RG = 2.5 Q		105	150	ns
Source-Drain Diode Ratings and Characteristics (Tc = 250C)b
Continuous Current	Is				75	A
Pulsed Current	ISM				240	A
Forward Voltagea	VSD	IF = 85 A, VGS = OV		1 1	1 4	V
Reverse Recovery Time	trr			50	85	ns
Peak Reverse Recovery Current	IRM(REC)	IF = 85 A, di/dt = 100 A/ys		2 7	5	A
Reverse Recovery Charge	Qrr	IF = 85 A, di/dt = 100 A/ys		0 067	0 21	uC

R10-E1-W2-V700 Price

SYMBOL	PARAMETER	RATING	UNIT
Vcc	Supply voltage	-0.5 to+7O	V
VIN	Input voltage	-0.5 to +7.0	V
IIN	Input current	-30 to +5	mA
VOUT	Voltage applied to output in high output state	-0.5 to Vcc	V
IOUT	Current applied to output in low output state	96	mA
Tamb	Operating free air temperature range	O to +70
Tstg	Storage temperature range	-65 to +150

R10-E1-W2-V700 on stock

Effect of Reference Drift on System Accuracy A large portion of the temperature drift error budget in many systems is the system referencevoltage. This graph indicates the maximum temperature coefficient allowable if the referenceis to contribute no more than 0.5LSB error to the overall system performance. The example shown is a 12-bit system designed to operate over a temperature range from 25YC t0 65'fC. Assuming the system calibra- tion is performed at 25YC, the temperature span is 40'IC. It can be seen from the graph that the temperature coeffi- cient of the reference must be no worse than 3ppm/'ICif it is to contributeless than 0.5LSB error. For this reason, the LT1021 family has been optimized for low drift.

Memory Map For Veclor Locarions MS LS		interrupt Vector Description
FFFE FFFC FFFA FFF8 FFF6 FFF4 FFF2 FFFO	FFFF FFFD FFFB FFF9 FFF7 FFF5 FFF3 FFF1	RESEI NMI SW1 1RO F~RO SW12 SW13 Reserved

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