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R10-E2-X2-V700 Datasheet

Parameter Symbol Rating Unit
Collector-base voltage 2SA0719 VCBO -30 V
(Emitter open) 2SA0720 -60
Collector-emitter voltage 2SA0719 VCEO -25 V
(Base open) 2SA0720 -50
Emitter-base voltage (Col ector open) VEBO -5 V
Collector current Ic -500 mA
Peak collector current ICP -1 A
Collector power dissipation Pc 625 mW
Junction temperature Ti 150 oC
Storage temperature Tstg -55 to +150 oC


R10-E2-X2-V700 on stock
Hiccup Time Constant The hiccu p ci rcuit (at the'd elay' pin) provides overload p rotection for the solution. The threshold of the hiccu p mode is determined by the value of RSENSE, When >50mV is developed across the sense resistor, the hiccup circuit is triggered, inhibiting the device.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between GND pin and ground, as shown in the typical application circuit The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf iS seen by the device. (ViI, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potentialof the control unit to node [6] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, ViI and Vstat. This solution allows the use of a standard diode.