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R1110N501B - JA Datasheet

	Equivalent Circuit	Sample Application Circuit

R1110N501B - JA Price

The LDT2222A (untinned) and LDT2222AT (tinned) are NPN silicon transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT2222A and LDT2222AT meet the general specifications of the 2N2222A transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT2222A and LDT2222AT can be provided with special feature options such as additional temperature cycling and screening.
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SYMBOL	CHARACTERISTICS	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Pout Pin Pg nc VSWR	Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance	F = 2200-2500 MHz Vcc = 24 Volts Pout =3.5Watts	3.5 8.5	40	0.5 101	Watts Watts dB %

Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control of the chip enable, output enable, and write enable. Initially, a read cycle to any memory location using 3 0f19

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