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R1121N261BTR，there are the best R1121N261BTR suppiers all over the world here.These are the list and detailed contact method of R1121N261BTR suppliers all over the world as follows.You can buy or get informations of R1121N261BTR through email , message or tel.

suppliers of R1121N261BTR and PDF data of R1121N261BTR

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

R1121N261BTR Datasheet

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5mm

10mm×10mm

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WAVEFORM

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3600

R1121N261BTR Price

Symbol	Parameter	Test Conditions0)		Typc3)	Max	Unit
lcc	Quiescent Power Supply Current	Vcc = Max.,VIN = GND or Vcc		O01	1 00	uA
Alcc	Supply Current per Input HIGH	Vcc = Max., VIN = 3.OV Input toggling @ 50% duty cycle		O1	30	uA
ICCD	Dynamic Power Supply Current Per Outputc2)	Vcc = Max., outputs enabled		60	90	uA/ MHz
lc	Total Power Supplyc2,4) Current	Vcc = Max., Input @ 50% duty cycle, f, = 10MHz	VIN = VCC or VIN = GND	6.0	1 0	mA
lc	Total Power Supplyc2,4) Current	Vcc = Max., Input @ 50% duty cycle, f, = 2.5MHz	VIN = VCC or VIN = GND	1.5	3O	mA

R1121N261BTR on stock

Type Number	Repetitive Peak Voltages VDRM VRRM v	Conditions
DCR1002SF14 DCR1002SF13 DCR1002SF12 DCR1002SF11 DCR1002SF10	1400 1300 1200 1100 1000	T . = 00 t0 1250C, ID:JM = IRRM = 100rTiA, VDRM, VRRM tp = 10ffis, VDSM & VRSM VDRM & VI~MM + 100V respectivel\r

CHARACTERISTIC	SYMBOL	MIN	TYP	MAX	UNIT	TEST CONDITION
Collector Cutoff Current	ICBO			0 1		VCB = 5 V, IE = 0
Emitter Cutoff Current	IEBO			0 1	cq	VEB=1 V, le=O
DC Current Gain	hFE	75		150		VCE = 3 V, le = 5 mA*i
Gain Bandwidth Product	fT		12		GHz	VCE = 3 V, le = 5 mA, f = 2.0 GHz
Feed back Capacitance	Cre		0 2	0 4	pF	VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain	IS21el2	9	11		dB	VCE = 3 V, le = 5 mA, f = 2.0 GHz
Noise Figure	NF		2 5	4 0	dB	VCE = 3 V, le = 3 mA, f = 2.0 GHz