Read and write accesses to the DDR SDRAM are b urst oriented; accesses start at a selected location and continue for a programmed number oflocations in a programmed sequence. Accesses begin with the regis- tration of an ACTIVE command, which is then fol- lowed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programm able READ or WRITE burst lengths of2, 4, or 8 locations. An auto precharge function may be enabled to provide a self- timed row precharge that is initiated at the end ofthe burst access.
| Reverse current VR = 4 V, TA = 25 aC VR = 4 V, TA = 65 aC | R | | | 1 0 200 | nA |
| | | | | |
