| : 2SC4155A is a sr.rper mini packege resin sealed silicon NPN epitaxial typa transistor. It is designe,d for low frequency voltage amplify application. | OUTLINE DRAWING ' Unit:mm |
| | 9.4-25, 1.25 _ 0.42! | |
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| FEATURE | | | rn | | | | 1-1 | |
| . Small collector to emitter saturation vpltage VCE(sac)=0.3V max .L . Excellent lineality of DC forward curreni gain | | | L rI | @ ! | | | |
| ' Supper mini package for easy mounting | a | | |
| APPLICATION | | t | + | ] |
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| For hybrid IC,small type machine low frequancy voltage amplify application. MAXIMUM RATINGS (Ta=25'C) | -- TERMINAL CONNECTOR (D : BASE : EMITTER EIAJ : SC-70 0 :COLLECTOR JEDEC : |
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| Symbol | Parameter | Ratings | Unit | | MARKING | |
| VCBO | Collector to Base voltage | 50 | V | |
| VEBO | Emitter to Base voltage | 6 | V | ri |
| VCEO | Collector to Emitter voltaga | 50 | V | | | |
| lc | Collector current | 200 | mA | H-R |
| Pc | Collector dilsslpatlon(Ta=25'C) | 150 | mW | |
| TI | Junction temperature | +125 | c | /u u\ TYPE NAME lve ~TEM |
| Ig | Storage tempraturfa | -55to+125 | |
| hh . - ..vnL unr\nt.u I Clllb IlL;b ( I a=2s'c) |
| Symbol | Parametar | Test conditions | Limits | |
| M | n | Typ | Max | Unit |
| V(BR)CEO | C to E break down valtage | I C=lOOA, RBE=OO | 50 | | | V |
| ICBO | Collector cut cff current | VCB=50V, [ E=O | | | 0.1 | A |
| I EBO | Emitter cut off current | VEB=4V, I c=O | | | 0.1 | A |
| hFE * | DC forward current gain | VCE=6V, I c=lmA | 120 | | 820 | |
| hFE | DC forward current gain | VCE=6V, I c=O.lmA | 70 | | | |
| VCE(sat) | C to E Saturation voltage | I C=lOOrriA, I B=lOrTiA | | | 0.3 | V |
| fT | Gain band width product | VCE=6V, I E=-lOmA | | 200 | | MHz |
| Cob | Collector output capacitanca | VCB=6V, I E=O, f=lMHz | | 4 | | pF |
| NF | Noise figure | VCE=6V, I E=-O.ltliA, f=1kHz,RG=2k Q | | | 15 | dB |
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