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suppliers of RSD-0924DH and PDF data of RSD-0924DH

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
RSD-0924DH	recompower	New origin	08+		500	HK United Electronics Dev.Ltd .. Contact:franken Tel:86-755-83633553 Fax: Email: franken@united-ic.com

RSD-0924DH Datasheet

Symbol	Parameter and conditions		MIN	MAX.	Unit
VDD	Supply voltage		2.50 - 0.13	2.50+ 0.13	v
VCMOS	CMOS l/0 power supply at pad	2.5V controllers	2 5 0 13	2.5+ 0.25	V
VCMOS	CMOS l/0 power supply at pad	1.8V controllers	1.8 - 0.1	1.8+ 0.2	V
VREF	Reference voltage		1.4 - 0.2	1.4+ 0.2	v
VIL	RSL input low voltage		VREF - 0.5	VREF - 0.2	v
VIH	RSL input high voltage		VREF+ 0.2	VREF+ 0.5	v
VIL,CMOS	CMOS input low voltage		O3	0.5VCMOS - 0.25	v
VIH,CMOS	CMOS input high voltage		0.5VCMos+0.25	VCMOS+ 0.3	v
VOL,CMOS	CMOS output low voltage, IOL,CMOS = 1 mA			0 3	v
VOH,CMOS	CMOS output high voltage, IOH,CMOS = -0.25 mA		VCMOS - 0.3		v
IREF	VREF current, VREF,MAX		160 0	+160.0
ISCK,CMD	CMOS input leakage current, (0 " VCMOS " VDD)		160 0	+160.0	c<A
ISIN,SOUT	CMOS input leakage current, (0 " VCMOS " VDD)		10 0	+10.0	c<A

RSD-0924DH Price

				0	161\

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							0I	V
							l 058V
							1 0,57V
							I 0,~6V
							o.55v
							0.5ttV
			L'52		Y		0.53V i=0.51 V
l	_	2 3 f

RSD-0924DH on stock

	Parameter	Min	Typ.	Max	Units	Conditions
V(BR)CES	Collector-to-Emitter Breakdown Voltage~	600			V	VGE = OV, lC = 250pA
CV(BR)CES/qX J	Temperature Coeff. of Breakdown Voltage		0.72		V/oc	VGE = OV,IC = 1.OmA
VCE(on)	Collector-to-Emitter Saturation Voltage		1.41	1.7	V	lc = 4.8A VGE = 15V
			1.66			lc = 8.8A See Fig. 2, 5
			1.42			lc = 4.8A, Tj = 1500C
VGE(th)	Gate Threshold Voltage	3.0		6 0		VCE = VGE, lC = 250pA
cvGE(th)iqjrJ	Temperature Coeff. of Threshold Voltage		-11		mV/oC	VCE = VGE, lC = 250pA
gfe	Forward Transconductance	2 9	5 0		S	VCE = 100V, lC = 4.8A
ICES	Zero Gate Voltage Collector Current			250	UA	VGE = OV, VCE = 600V
ICES	Zero Gate Voltage Collector Current			1700	UA	VGE = OV, VCE = 600V, Tj = 1500C
VFM	Diode Forward Voltage Drop		1.4	1.7	V	lc = 8.OA See Fig. 13
VFM	Diode Forward Voltage Drop		1 3	1.6	V	lc = 8.OA, TJ = 1500C
IGES	Gate-to-Emitter Leakage Current			±100	nA	VGE= +20V

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