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RSM-120-02-L-S Datasheet

RF Specifications
Parameters requency Minimum Typical Maximum Units
Insertion Loss 0.05 - 18 GHz 18 - 50 GHz 0 7 1 0 0.8 1.4 dB
Isolation 0.05 - 18 GHz 18 - 50 GHz 25 25 41 32 dB
Input Return Loss 0.05 - 18 GHz 18 - 50 GHz 10 10 21 22 dB
Output Return Loss 0.05 - 18 GHz 18 - 50 GHz 10 10 26 17 dB
Switching Speed 10 GHz 20 ns


RSM-120-02-L-S Price

Symbol Parameter Test Conditions Max Units
VCES Collector-emitter voltage VGE= OV 1700 V
VGES Gate-emitter voltage +20 V
le Continuous collector current T = 75C 1200 A
IC(PK, Peak collector current 1ms, Tcase = 1050C 2400 A
D Max. transistor power dissipation Tcase = 250C. T, = 1500C case ' 10.4 kW
12f Diode l2t value VR = 0. tp = 10ms. Tv, = 1250C vJ 480 kA2S
Vl Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V
QPD Partial discharge - per module IEC1287. V, = 1500V, V2 = 1100V, 50Hz RMS 10 pC


The amplifier's input stage will operate with voltages from about -0.2 V below the negative supply voltage to within about l V of the positive supply. Exceeding these values will not cause phase reversal at the output; however, the input ESD protection de- vices will begin to conduct if the input voltages exceed the sup- ply rails by greater than 0.5 V. The gain resistors that connect to Pins 2, 6, 9, and 13 are protected from ESD in such a way that the voltages applied to these pins may exceed the negative sup- ply by as much as -7 V.