Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights t manufacturer. WTE reserves the right to change any or all information herein without further notice.
RSM11002LDP Price| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 60 | V |
| | Continuous Drain Current(@Tc = 25aC) | 70 | A |
| ID | Continuous Drain Current(@Tc = 1000C) | 51 | A |
| IDM | Drain Current Pulsed (Note l) | 280 | A |
| VGS | Gate to Source Voltage | +25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 800 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7 0 | V/ns |
| PD | Total Power Dissipation(@Tc = 25 0C) | 158 | W |
| Derating Factor above 25 0C | 1 05 | W/oC |
| TSTG, Tj | Operating Junction Temperature & Storage Temperature | - 55175 | oc |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. | 300 | oc |
| | | |
RSM11002LDP on stock| Tj = 25IC VOUT = VSENSE | | | | | |
| *FOR VOUT = 3.3V | | Ri'LUttU -'- | | | |
| | r | | | ILOAD = 500mA* | | |
| | | | | | | I | | |
| |j | /RLOAD | = 33 | ) | | | | | |
| j| | / 'LOIAD I 'u"I'r' | | | | | t |
| | | | I riLOAD - II I I li nAn = 300mA* | | L |
| | | | | |
| | | (ILOAD lOOmA' | | |
| | L | | Tj = 25IC |
| | | | | | | | | |
| Items | Symbols | Test Conditions | Min | Typ. | Max | Units |
| | | VGE=OV VCE=600V Ti-250C | | | 1.0 | mA |
| Zero Gate Voltage Collecter Current | ICES | VGE=OV VCE=600V Ti=1250C | | | | mA |
| Gate-Emitter Leackage Current | IGES | VCE-OV VGE=1:20V | | | 100 | nA |
| Gate-Emitter Threshold Voltage | VGE tth} | VCE-20V lc=30mA | 3.0 | | 6.0 | V |
| Collecter-Emitter Saturation Voltage | VCE <satJ | VGE=15V lc=30A | | | 2 5 | V |
| Input Capacitance | Cies | VGE=OV | | 2850 | | pF |
| Output Capacitance | Coes | VCE=10V | | | |
| Reverse Transfer Capacitance | Cres | f=lMHz | | | |
| | ton | Vcc=300V | | | 0 8 | |
| Turn-on Time Resistive load | tr | lc=30A | | | 0.6 |
| | toff | VGE=±15V | | | 1 5 | |
| Turn-off Time Inductive load | tf | Ro=82fl | | | 1.0 |
| Diode Forward On-Voltage | VF | IF=30A, VGE=OV | | | 2.5 | V |
| Reverse Recovery Time | trr | IF=30A, -di/dt-lOOA/ps \kE=-lOV | | | 300 | ns |
| | | | | | |
