RSZ-103.3P Datasheet BOSFET PowerIC I 10100perations I 300psec Operating Time I 0.2pVolt Thermal Offset I 3 milliwatts Pick-Up Power I 1000V/psec dv/dt I Bounce-Free I 8-pin DIP Package I -400C t0 850C I UL recognized I RSZ-103.3P Price| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, VGs = OV | 60 | | | v | | IGSS | Gate-source leakage current | VGS = +20V, VDS = OV | | | ±0 1 | | | IDSS | Drain-source leakage current | VDS = 60V, VGS = OV | | | 0 1 | mA | | VGS (th) | Gate-source threshold voltage | ID = 1rriA, VDS = 10V | 1 0 | 1.5 | 2.0 | V | | rDS (ON) | Drain-source on-state resistance | ID = 35A, VGS = 10V | | 5.4 | 7.0 | m | | rDS (ON) | Drain-source on-state resistance | ID = 35A, VGS = 4V | | 6.5 | 8.4 | m | | VDS (ON) | Drain-source on-state voltage | ID = 35A, VGS = 10V | | 0 19 | 0 25 | V | | yfs | Forward transfer admittance | ID = 35A, VDS = 10V | | 65 | | S | | Ciss | Input capacitance | | | 8200 | | pF | | Coss | Output capacitance | VDS = 10V, VGS = Oy f= 1MHz | | 1600 | | pF | | Crss | Reverse transfer capacitance | | 860 | | pF | | td (on) | Turn-on delay time | | | 54 | | ns | | tr | Rise time | VDD = 30y ID = 35A, VGS = 10V, RGEN = RGS = sol | | 150 | | ns | | td (off) | Turn-off delay time | | 800 | | ns | | | Fall time | | 380 | | ns | | VSD | Source-drain voltage | Is = 35A, VGS = OV | | 1.0 | 1.5 | V | | Rth (ch-c) | Thermal resistance | Channel to case | | | 1.0 | IC/W | | trr | Reverse recovery time | Is = 70A, dis/dt = -100A/c6 | | 90 | | ns | | | | | | | |
RSZ-103.3P on stock| TYPE | Nominal Zener Voltage | Maximum Zener Impedance | Maximum Reverse Leakage Current | Maximum DC Zener Current | | Vz@IZT | IZT | ZZT@IZT | ZZK@IZK | IZK | IR@VR | IZM | | (V) | (mA) | (Q) | (Q) | (mA) | (¨A) | (V) | (mA) | | | | | | | | | |
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