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RT05-1912BR Datasheet

		TEST				Ta= 25aC			Ta = - 40~85aC
PARAMETER	SYMBOL	CIR- CUIT	I n:} i LUI-J Ul I IUI-J		VCC	MIN	TYP	MA×	MIN	MAX	UNIT
High-Level Input Voltage	VIH				2.0 3O 5.5	1.50 VCC x0.7			1.50 VCC x0.7		V
Low-Level Input Voltage	VIL				2.0 3.0 5.5			0.50 vcc x 0.3		0.50 VCC x 0.3	V
Hig h-Level Output-Voltage	VOH		VIN= VIH	IOH=- 50pA	2.0 3.0 4.5	1.9 2.9 4.4	2.0 3.0 4.5		1.9 2.9 4.4		V
Hig h-Level Output-Voltage	VOH		VIN= VIH	IOH = -4mA IOH = - 8mA	3.0 4.5	2.58 3.94			2.48 3.80		V
Low-Level Output-Voltage	VOL		VIN = VIH	101= 50pA	2.0 3.0 4.5		0O O0 0.0	0.1 0.1 O.l		0.1 0.1 0.1	V
Low-Level Output-Voltage	VOL		or VIL	IOL=4mA IOL=8mA	3.0 4.5			0.36 0.36		0.44 0.44	V
Input Leakage Current	IIN		VIN = 5.5V or GND		0- 5.5			±0.1		±1O
Quiescent Supply Current	ICC		VIN - VCC or GND		5.5			2.0		20.0	A

RT05-1912BR Price

Reverse current VR=15V	R	3	nA
Reverse current VR = 15 V, TA = 65 aC	R	1 00	nA

RT05-1912BR on stock

Tyy blo.	Ptd lmW)	VCEO cvI	hF NrWUC	C lm^)	VCEC m ^X	Im^)	f	tOFF lm)	PICKAGE
2N2894 2N 3209	360 3	12 20	40/120 3W120	30 30	0 2 0.2	10010 30n	400 400	90 90	T018

Absolute Maximum Ratings at Ta= 250C Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Current(Pulse) ICP Collect,or Dissipation PC Junct,ion Temperature Tj Storage Temperature Tstg X : On-chip zener diode (60+10V)

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