RT0805BRD0747KL Datasheet| Symbol | Min. | Typ. | Max. | Unit | Test Conditions | | BVCBO | 25 | | | V | lc=lOuA, IE=O | | BVCEO | 20 | | | V | lc=lmA, lB=O | | BVEBO | 5 | | | V | IE=lOuA, lc=0 | | ICBO | | | 1 | uA | VCB=20V, IE=O | | *VCE(sat) | | | 500 | mV | lc=0.8A, IB=80mA | | VBE(on) | | | 1 | V | VCE=2V, lc=500mA | | hFE | 85 | | 400 | | VCE=2V, lc=500mA | | fr | | 1 90 | | MHz | VCE=2V, lc=500mA | | Cob | | 22 | | pF | VCB=10V, f=lMHz, IE=O | | | | | | |
RT0805BRD0747KL on stock The recommended erasure procedure for the 27C040 is exposure to shortwave ultra- violetlight which has a wavelength of 2537 Angstroms (A). The integrated dose (i.e., UV intensity x exposure tme) for erasure should be minimum of l5Wsedcm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with a 12,OOOyW/cm2 power rating. The 27C040 should be placed within one inch of thelamp tubes dunng erasure. The maximum integrated dose a 27C040 can be exposed to without damaOe is 7258Wsedcm2 (1 week @ 12000yW/cm2). Exposun} of these CMOS EPROMs to hih intensity UVlyht forlonger periods may cause permanent damage. | PARAMETERS | SYMBOL | MIN TYP MAX | UNIT | | Supply Current | Icc | 35 45 | mA | | Power Dissipation | PDISS | 0.175 | W | | Wavelength | | 830 850 860 | nm | | Supply Voltage | vcc | 4.75 5.25 | V | | Output Optical Power | PO | -19 -14 | dBm | | Data Input Voltage - Low (2) | VIL | - 1.810 -1.475 | vcc | | Data Input Voltage - High (2) | VIH | -1.165 -0.880 | vcc | | Output Extinction Ratio (3) | | 10 | dB | | Optical Rise Time | tr | 0.6 3 | ns | | Optical Fall Time | tf | 0.8 3 | ns | | Duty Cycle Distortion | DCD | O6 | ns p-p | | Systematic Jitter | SJ | 0.60 | ns p-p | | Random Jitter | RJ | 0.20 0.69 | ns p-p | | | | |
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