| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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RT133R0J15 Datasheet RF Monolithics, Inc. Phone: (972) 233-2903 Fax: (972) 3 87-9148 E-mail: info@rfm.com Page l of 2 RFM Europe Phone: 44 1963 251383 Fax: 44 1963 251510 http://www.rfm.com ~1999 by RF Monolithics. Inc. The stylized RFM logo are registered trademarks ofRF Monolithics, Inc. R02047-102599 RT133R0J15 Price co Small outline S08 and SOT23 packages co T092 style package co No stabilising capacitor required co Typical Tc 30ppm/oC co Typical slope resistance 0.41 c0 20L 1% and 0.5 0h tolerance co Industrial temperature range co Operating current 60ccA t0 15mA co Transient response, stable in less than 10 ccs RT133R0J15 on stock
The Microchip Technology Inc. 27LV512 is a low-volt- age (3.0 volt) CMOS EPROM designed for battery powered applications. The device is organized as a 64K x 8 (64K-Byte) non-volatile memory product. The 27LV512 consumes only 12 mA maximum of active current during a 3.0 volt read operation therefore improving battery performance. This device is designed for very low-voltage applications where con- ventional 5.0 volt only EPROMs can not be used. Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accom- plished in less than 200 ns at 3.0 volts. This device allows systems designers the ability to use low voltage non-volatile memory with today's low-voltage micropro- cessors and peripherals in battery powered applica- tions. A complete family of packages is offered to provide the most flexibility in applications. For surface mount appli- cations, PLCC, SOIC or TSOP packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages. |
